The Hynix Synchronous DRAM is suited for advaced-consumer application which use the batteries such as Image displayer application (Digital still camera etc.) and portable applications (portable multimedia player and portable audioplayer).
The Hynix HY5V52ALF(P) Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumer memory applications which requires large memory density and high bandwidth.
Also, Hynix SDRAMs is used high-speed consumer applications.
Short for Hynix Synchronous DRAM, a type of DRAM that can run at much higher clock speeds and Low power consumption memory.
It is organized as 4banks of2,097,152 x 32I/O.
Synchronous DRAM is a type of DRAM which operates in synchronization with input clock.
The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK).
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x32 Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK.
The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
The Synchronous DRAM uses an internal pipelined architecture to achieve high-speed operation.
This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access.
Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, randon-access operation.
Read and write accesses to the Hynix Synchronous DRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.
The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be accessed.
The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access.
The Hynix Synchronous DRAM also provides for special programmable options including Partial Array Self Refresh of full array, half array, quarter array, Temperature Compensated Self Refresh of 45, 85 degrees oC.
A burst of Read or Write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule).
The HynixSynchronous DRAM has the special Power consumption function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption.
Since an internal temperature sensor is implanted, it enables to automatically adjust refresh rate according to temperature without external EMRS command.All inputs are LVTTL compatible.
Devices will have a VDD and VDDQ supply of 3.3V (nominal).